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WebMay 20, 2024 · This article presents the design of a highly linear high-power silicon … WebTechniques and mechanisms to impose stress on a transistor which includes a channel region and a source or drain region each in a fin structure. In an embodiment, a gate structure of the transistor extends over the fin structure, wherein a first spacer portion is at a sidewall of the gate structure and a second spacer portion adjoins the first spacer portion. signify assent crossword
Product Brief RF transistors 8th generation - Infineon
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